Samsung 850 EVo (MZ-75E250) 250GB Internal SSD

4.6 Out of 5 stars ( 461 Ratings )
best price Rs 5,999
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Product Key Features

  1. » Powered by Samsung V-NAND technology with optimized performance for everyday computing
  2. » Incredible sequential read/write performance of up to 540mbps and 520mbps respectively and random read/write IOPS performance of up to 98K and 90K respectively
  3. » Endurance, energy efficiency, reliability and a 5 year limited warranty
  4. » Included Contents: 2.5-inch SATA III SATA SSD and user manual
  5. » Free download of Samsung Data Migration and Magician software available for easy installation and SSD management

Samsung 850 EVo (MZ-75E250) 250GB Internal SSD Price Comparison

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Samsung 850 EVo (MZ-75E250) 250GB Internal SSD Details

This unique technology takes NAND architecture to the next level by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions. This enables the SSD to perform better while utilizing a smaller footprint.

Specification and features of Samsung 850 EVo (MZ-75E250) 250GB Internal SSD

General
BrandSamsung
Series850 EVO
Model IDMZ-75E250BW
Drive Configuration
Form Factor2.5 Inch
DeviceDesktop, Laptop
Device Type2.5 Inch SSD
Drive Capacity250 GB
InterfaceSATA
Cache Memory512 MB
Reliability1500000 hours (Mean Time between Failures)
Power
Idle0.05 W
Power Consumption0.02 W (Standby/Sleep)
Standard Input Voltage5 V DC
Maximum Start Current1 A
Dimensions
Dimensions100 mm x 69.85 mm x 6.8 mm
Weight40 g
Operating Conditions
Operating Temperature0DegC to 70DegC
Shock Tolerance1500 Gs for 0.5 ms (Operating)
Other Features
Compatible with SATA 3 Gb/s and SATA 1.5 Gb/s Interface, Samsung 32 Layer 3D V-NAND, Samsung MGX Controller, TRIM Supported, SMART Supported, Auto Garbage Collection Algorithm, Encryption Support: AES 256-bit Encryption (Class 0), TCG / Opal, IEEE1667 (Encrypted Drive), World Wide Name Supported, Sequential Read: 540 MB/sec, Sequential Write: 520 MB/sec, Random Read (4KB, QD32): 97000 IOPS, Random Write (4KB, QD32): 88000 IOPS, Random Read (4KB, QD1): 10000 IOPS, Random Write (4KB, QD1): 40000 I
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